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Title: Ferroelectric and ferromagnetic properties in BaTiO{sub 3} thin films on Si (100)

Journal Article · · Journal of Applied Physics
DOI:https://doi.org/10.1063/1.4894508· OSTI ID:22314399
 [1]; ; ;  [2]
  1. Materials Science Division, Army Research Office, Research Triangle Park, North Carolina 27709 (United States)
  2. Department of Materials Science and Engineering, North Carolina State University, Raleigh, North Carolina 27695 (United States)

In this paper, we report on the epitaxial integration of room temperature lead-free ferroelectric BaTiO{sub 3} thin (∼1050 nm) films on Si (100) substrates by pulsed laser deposition technique through a domain matching epitaxy paradigm. We employed MgO and TiN as buffer layers to create BaTiO{sub 3}/SrRuO{sub 3}/MgO/TiN/Si (100) heterostructures. C-axis oriented and cube-on-cube epitaxial BaTiO{sub 3} is formed on Si (100) as evidenced by the in-plane and out-of-plane x-ray diffraction, and transmission electron microscopy. X-ray photoemission spectroscopic measurements show that Ti is in 4(+) state. Polarization hysteresis measurements together with Raman spectroscopy and temperature-dependent x-ray diffraction confirm the room temperature ferroelectric nature of BaTiO{sub 3}. Furthermore, laser irradiation of BaTiO{sub 3} thin film is found to induce ferromagnetic-like behavior but affects adversely the ferroelectric characteristics. Laser irradiation induced ferromagnetic properties seem to originate from the creation of oxygen vacancies, whereas the pristine BaTiO{sub 3} shows diamagnetic behavior, as expected. This work has opened up the route for the integration of room temperature lead-free ferroelectric functional oxides on a silicon platform.

OSTI ID:
22314399
Journal Information:
Journal of Applied Physics, Vol. 116, Issue 9; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0021-8979
Country of Publication:
United States
Language:
English