Structural, electrical, and optical properties of erbium-doped epitaxial BaTiO{sub 3} films grown by RF sputtering
- Univ. of Pittsburgh, PA (United States)
The authors have investigated the epitaxial growth of Er-doped BaTiO{sub 3} films using rf magnetron sputtering. The Er-doped films (0.5--1 {micro}m thick) were deposited on MgO (001) single-crystal substrates at various temperatures (500--800 C). The films deposited at 700 C or above are highly (001)-oriented with an in-plane epitaxial relationship of BaTiO{sub 3}[100] {parallel} MgO[100], as confirmed by X-ray diffraction. The Er doped films were found to be compressively stressed, as-deposited. The amount of stress monotonically decreases as a function of the deposition temperature. The Er-doped epitaxial films show a strong room-temperature photoluminescence at 1.54 {micro}m, which corresponds to intra-transitions of Er{sup 3+} ions. Electrical characterizations were carried out on Er-doped BaTiO{sub 3} films that were grown on MgO with a conduction In{sub 2}O{sub 3} buffer electrode. The measurement shows that the Er-doped BaTiO{sub 3} films are ferroelectric with a remanent polarization of 1.5 {micro}C/cm{sup 2} and a coercive field of 40 kV/cm.
- OSTI ID:
- 392170
- Report Number(s):
- CONF-951155--; ISBN 1-55899-304-5
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
BARIUM OXIDES
CAPACITANCE
CRYSTAL STRUCTURE
DOPED MATERIALS
ELECTRIC FIELDS
ELECTRICAL PROPERTIES
ERBIUM ADDITIONS
EXPERIMENTAL DATA
FERROELECTRIC MATERIALS
HYSTERESIS
MAGNESIUM OXIDES
MAGNETRONS
OPTICAL PROPERTIES
ORIENTATION
PHOTOLUMINESCENCE
SPUTTERING
SUBSTRATES
TITANIUM OXIDES
X-RAY DIFFRACTION