Electronic properties of ferroelectric BaTiO{sub 3}/MgO capacitors on GaAs

Journal Article · Mon Oct 11 04:00:00 EDT 2004 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.1804237· OSTI ID:20634360

Murphy, T E; Chen, D; Phillips, J D ^[1]

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1. Department of Electrical Engineering and Computer Science, University of Michigan, Ann Arbor, Michigan 48109-2122 (United States)

Thin films of MgO and BaTiO{sub 3} were deposited on (001) GaAs substrates using molecular beam epitaxy and pulsed laser deposition, respectively. X-ray diffraction scans indicate crystalline MgO and BaTiO{sub 3} thin films with preferential c-axis orientation. Capacitors fabricated from the BaTiO{sub 3}/MgO/GaAs structures demonstrate ferroelectric hysteresis behavior with a remenant polarization of 0.4 {mu}C/cm{sup 2}. Small-signal capacitance measurements indicate an effective dielectric constant for the BaTiO{sub 3}/MgO structure of 45.5{epsilon}{sub 0}. A hysteresis behavior indicative of ferroelectric switching is observed in the capacitance-voltage characteristics with a memory window of approximately 2 V. The observation of ferroelectric behavior in these materials are promising for future multifunctional devices on GaAs.

• OSTI ID: 20634360
• Journal Information: Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 15 Vol. 85; ISSN APPLAB; ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
BARIUM COMPOUNDS
CAPACITANCE
CAPACITORS
DIELECTRIC MATERIALS
ELECTRIC POTENTIAL
ENERGY BEAM DEPOSITION
GALLIUM ARSENIDES
HYSTERESIS
LASER RADIATION
MAGNESIUM OXIDES
MOLECULAR BEAM EPITAXY
PERMITTIVITY
POLARIZATION
PULSED IRRADIATION
SUBSTRATES
THIN FILMS
TITANATES
X-RAY DIFFRACTION