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Electrical properties and poling of BaTiO[sub 3] thin films

Journal Article · · Applied Physics Letters; (United States)
DOI:https://doi.org/10.1063/1.111375· OSTI ID:7233369
; ;  [1]
  1. Department of Materials Science and Engineering, Northwestern University, Evanston, Illinois 60208 (United States) Materials Research Center, Northwestern University, Evanston, Illinois 60208 (United States)

Dielectric and ferroelectric properties were measured for both highly [ital a]-axis textured and randomly oriented BaTiO[sub 3] thin films deposited on Pt coated MgO substrates via metal-organic chemical-vapor deposition. Dielectric constants on the order of [epsilon][similar to]10 and an absence of ferroelectric hysteresis were generally observed for the as-deposited films. Upon applying an electric field exceeding a threshold value of [similar to]50--100 kV/cm across the film, both the dielectric constant and the ferroelectric hystersis were enhanced significantly as a result of poling. The dielectric constant increased to [epsilon][similar to]100, and the spontaneous polarization of the [ital a]-axis textured film reached [ital P][sub [ital s]][ge]15 [mu]C/cm[sup 2]. The measured dielectric and ferroelectric properties of the BaTiO[sub 3] thin films depended on the microstructure of the films.

DOE Contract Number:
FG02-85ER45209
OSTI ID:
7233369
Journal Information:
Applied Physics Letters; (United States), Journal Name: Applied Physics Letters; (United States) Vol. 64:22; ISSN APPLAB; ISSN 0003-6951
Country of Publication:
United States
Language:
English