Polarity control and transport properties of Mg-doped (0001) InN by plasma-assisted molecular beam epitaxy

Journal Article · Wed May 15 04:00:00 EDT 2013 · Journal of Vacuum Science and Technology. A, Vacuum, Surfaces and Films

DOI:https://doi.org/10.1116/1.4795811· OSTI ID:22116047

Choi, Soojeong; Feng, Wu; Bierwagen, Oliver; Speck, James S. ^[1]

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1. Materials Department, University of California, Santa Barbara, California 93106 (United States)

The authors report on the plasma-assisted molecular beam epitaxy growth and carrier transport of Mg-doped In-face (0001) InN. The 1.2 {mu}m thick InN films were grown on GaN:Fe templates under metal rich conditions with Mg concentration from 1 Multiplication-Sign 10{sup 17}/cm{sup 3} to 3 Multiplication-Sign 10{sup 20}/cm{sup 3}. A morphological transition, associated with the formation of V-shape polarity inversion domains, was observed at Mg concentration over 7 Multiplication-Sign 10{sup 19}/cm{sup 3} by atomic force microscopy and transmission electron microscopy. Seebeck measurements indicated p-type conductivity for Mg-concentrations from 9 Multiplication-Sign 10{sup 17}/cm{sup 3} to 7 Multiplication-Sign 10{sup 19}/cm{sup 3}, i.e., as it exceeded the compensating (unintentional) donor concentration.

• OSTI ID: 22116047
• Journal Information: Journal of Vacuum Science and Technology. A, Vacuum, Surfaces and Films, Journal Name: Journal of Vacuum Science and Technology. A, Vacuum, Surfaces and Films Journal Issue: 3 Vol. 31; ISSN 0734-2101; ISSN JVTAD6
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ATOMIC FORCE MICROSCOPY
GALLIUM NITRIDES
INDIUM COMPOUNDS
MAGNESIUM
MOLECULAR BEAM EPITAXY
PLASMA
SEMICONDUCTOR MATERIALS
THIN FILMS
TRANSMISSION ELECTRON MICROSCOPY