Mg doped InN and confirmation of free holes in InN

Journal Article · Mon Jan 24 04:00:00 EST 2011 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.3543625· OSTI ID:21518260

Wang, K; Yamaguchi, T ^[1]; Miller, N; Mayer, M A; Haller, E E ^[2]; Iwamoto, R; Araki, T ^[3]; Nanishi, Y ^[3]; Yu, K M; Walukiewicz, W; Ager, III, J W ^[4]

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1. Research Organization of Science and Engineering, Ritsumeikan University, 1-1-1 Noji Higashi, Kusatsu, Shiga 525-8577 (Japan)
2. Department of Materials Science and Engineering, University of California, Berkeley, California 94720 (United States)
3. Department of Photonics, Ritsumeikan University, 1-1-1 Noji Higashi, Kusatsu, Shiga 525-8577 (Japan)
4. Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, California 94720 (United States)

We report a systematic investigation on Mg doped InN epilayers grown by radio-frequency plasma-assisted molecular beam epitaxy. Electrolyte capacitance voltage (ECV) combined with thermopower measurements find p-type conduction over an Mg concentration range. For InN:Mg in this p-type 'window' the Seebeck coefficients dramatically change their signs from negative to positive when the thickness of undoped InN interlayer decreases to zero. This notable sign change of Seebeck coefficient explains the previous inconsistency between ECV and thermopower results and confirms the existence of mobile holes in the InN:Mg. Taking into account the undoped InN interlayer, the hole density and mobility are extracted.

• OSTI ID: 21518260
• Journal Information: Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 4 Vol. 98; ISSN APPLAB; ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ALLOYS
CAPACITANCE
CRYSTAL GROWTH METHODS
DENSITY
DIMENSIONS
DOPED MATERIALS
ELECTRICAL PROPERTIES
ELECTROLYTES
ELECTROMAGNETIC RADIATION
EPITAXY
HOLE MOBILITY
INDIUM COMPOUNDS
INDIUM NITRIDES
LAYERS
MAGNESIUM ADDITIONS
MAGNESIUM ALLOYS
MATERIALS
MOBILITY
MOLECULAR BEAM EPITAXY
NITRIDES
NITROGEN COMPOUNDS
PHYSICAL PROPERTIES
PLASMA
PNICTIDES
PROCESSING
RADIATIONS
RADIOWAVE RADIATION
SEEBECK EFFECT
SEMICONDUCTOR MATERIALS
THICKNESS