Polarity inversion in high Mg-doped In-polar InN epitaxial layers

Journal Article · Mon Aug 20 04:00:00 EDT 2007 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.2773762· OSTI ID:21016167

Xinqiang, Wang; Che, Song-Bek; Ishitani, Yoshihiro; Yoshikawa, Akihiko; Sasaki, Hirokazu; Shinagawa, Tatsuyuki; Yoshida, Seikoh ^[1]

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1. Graduate Course of Electrical and Electronics Engineering, Chiba University, 1-33 Yayoi-cho, Inage-ku, Chiba 263-8522 (Japan) and InN-Project as a CREST program of JST, Chiba University, 1-33 Yayoi-cho, Inage-ku, Chiba 263-8522 (Japan)

To investigate the Mg-dopability in In-polar InN epilayers grown by molecular beam epitaxy, polarity inversion dependence on Mg-doping level is studied. A multiple-InN layer-structure sample with different Mg-doping levels is grown and analyzed by transmission electron microscopy. Formation of high density V-shaped inversion domains is observed for the Mg-doped InN with Mg concentration ([Mg]) of 2.9x10{sup 19} cm{sup -3}. These domains lead to polarity inversion from In to N polarity. Further study for Mg-doped InN epilayers shows that polarity inversion takes place when [Mg] increases above 1.6x10{sup 19} cm{sup -3}. It is also shown that the Mg-sticking coefficient is almost independent of the polarity.

• OSTI ID: 21016167
• Journal Information: Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 8 Vol. 91; ISSN APPLAB; ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
CRYSTAL GROWTH
CRYSTAL STRUCTURE
DOPED MATERIALS
INDIUM NITRIDES
LAYERS
MAGNESIUM
MICROSTRUCTURE
MOLECULAR BEAM EPITAXY
NUCLEATION
SEMICONDUCTOR MATERIALS
TRANSMISSION ELECTRON MICROSCOPY