Growth and properties of Mg-doped In-polar InN films

Journal Article · Mon May 14 04:00:00 EDT 2007 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.2741124· OSTI ID:20971928

Xinqiang, Wang; Che, Song-Bek; Ishitani, Yoshihiro; Yoshikawa, Akihiko ^[1]

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1. Department of Electronics and Mechanical Engineering, Chiba University, 1-33 Yayoi-cho, Inage-ku, Chiba 263-8522 (Japan)

Mg doping into In-polar InN layers for different Mg fluxes is performed on GaN templates by molecular beam epitaxy, and their electrical and optical properties are investigated. Mg concentration is linearly proportional to Mg-beam flux, indicating that the Mg-sticking coefficient is almost unity. With Mg doping, electron concentration decreases by the effect of carrier compensation, but it begins to increase with further increasing Mg flux because of Mg-related donorlike-defects formation. For the partially carrier-compensated Mg-doped InN, two photoluminescence peaks are observed; one is originated from free-to-acceptor emission with an acceptor activation energy of about 61 meV and the other is similar to the conventional band-to-band emission.

• OSTI ID: 20971928
• Journal Information: Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 20 Vol. 90; ISSN APPLAB; ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ACTIVATION ENERGY
CRYSTAL GROWTH
DOPED MATERIALS
ELECTRON DENSITY
ELECTRONS
FILMS
GALLIUM NITRIDES
INDIUM NITRIDES
LAYERS
MAGNESIUM
MOLECULAR BEAM EPITAXY
OPTICAL PROPERTIES
PHOTOLUMINESCENCE
SEMICONDUCTOR MATERIALS