LaAlO{sub 3}/Si capacitors: Comparison of different molecular beam deposition conditions and their impact on electrical properties
- Lyon Institute of Nanotechnologies (INL), INSA de Lyon, UMR CNRS 5270, 7 avenue Jean Capelle, Villeurbanne F-69621 (France)
- Lyon Institute of Nanotechnologies (INL), Ecole Centrale de Lyon, UMR CNRS 5270, 36 avenue Guy de Collongue, Ecully F-69134 (France)
A study of the structural and electrical properties of amorphous LaAlO{sub 3} (LAO)/Si thin films fabricated by molecular beam deposition (MBD) is presented. Two substrate preparation procedures have been explored namely a high temperature substrate preparation technique-leading to a step and terraces surface morphology-and a chemical HF-based surface cleaning. The LAO deposition conditions were improved by introducing atomic plasma-prepared oxygen instead of classical molecular O{sub 2} in the chamber. An Au/Ni stack was used as the top electrode for its electrical characteristics. The physico-chemical properties (surface topography, thickness homogeneity, LAO/Si interface quality) and electrical performance (capacitance and current versus voltage and TunA current topography) of the samples were systematically evaluated. Deposition conditions (substrate temperature of 550 Degree-Sign C, oxygen partial pressure settled at 10{sup -6} Torr, and 550 W of power applied to the O{sub 2} plasma) and post-depositions treatments were investigated to optimize the dielectric constant ({kappa}) and leakage currents density (J{sub Gate} at Double-Vertical-Line V{sub Gate} Double-Vertical-Line = Double-Vertical-Line V{sub FB}- 1 Double-Vertical-Line ). In the best reproducible conditions, we obtained a LAO/Si layer with a dielectric constant of 16, an equivalent oxide thickness of 8.7 A, and J{sub Gate} Almost-Equal-To 10{sup -2}A/cm{sup 2}. This confirms the importance of LaAlO{sub 3} as an alternative high-{kappa} for ITRS sub-22 nm technology node.
- OSTI ID:
- 22102225
- Journal Information:
- Journal of Applied Physics, Vol. 113, Issue 3; Other Information: (c) 2013 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0021-8979
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
SUPERCONDUCTIVITY AND SUPERFLUIDITY
ALUMINATES
CAPACITANCE
CAPACITORS
CURRENT DENSITY
DEPOSITION
LANTHANUM COMPOUNDS
LANTHANUM OXIDES
LAYERS
LEAKAGE CURRENT
MOLECULAR BEAM EPITAXY
PERMITTIVITY
SEMICONDUCTOR MATERIALS
SILICON
SUBSTRATES
SURFACE CLEANING
SURFACES
THIN FILMS