Field-effect transistors with LaAlO{sub 3} and LaAlO{sub x}N{sub y} gate dielectrics deposited by laser molecular-beam epitaxy
- Institute of Microelectronics, Peking University, Beijing (China) and Digital DNA Laboratories (China), Motorola Incorporated, Beijing (China)
High permittivity LaAlO{sub 3} (LAO) and LaAlO{sub x}N{sub y} (LAON) thin films have been deposited directly on a Si(100) substrate using a laser molecular-beam epitaxy technique. Metal-oxide-silicon field-effect transistors (MOSFETs) are fabricated using such LAO and LAON thin films as gate dielectrics and well-behaved transistor characteristics have been observed. High-resolution transmission electron microscopy observations indicate that LAO thin films can remain amorphous structure even after annealing at 1000 deg. C. The small equivalent oxide thickness (EOT) of 17 A is achieved for 75 A LAO film with an effective dielectric constant of 17.2{+-}1 for the whole gate stack. Furthermore, a smaller EOT, larger drive current, and lower subthreshold slope have been observed for devices with the LAON thin film. For all the devices, the gate leakage currents are at least two orders of magnitude lower than that of the same electrical thickness SiO{sub 2}. Reasonable subthreshold slopes of 248 and 181 mV/dec were obtained for MOSFETs with LAO and LAON films, respectively.
- OSTI ID:
- 20634337
- Journal Information:
- Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 16 Vol. 85; ISSN APPLAB; ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
Similar Records
Fabrication of metal-oxide-semiconductor field-effect transistors using crystalline {gamma}-Al{sub 2}O{sub 3} films as the gate dielectrics
Degradation mechanisms of electron mobility in metal-oxide-semiconductor field-effect transistors with LaAlO{sub 3} gate dielectric