Electrical properties of LaAlO{sub 3}/Si and Sr{sub 0.8}Bi{sub 2.2}Ta{sub 2}O{sub 9}/LaAlO{sub 3}/Si structures
Lanthanum aluminate (LaAlO{sub 3}) films were deposited on Si(100) substrates by evaporating single-crystal pellets in vacuum using an electron-beam gun. Then, they were annealed in N{sub 2} ambience at 700{sup o}C for 10 min using an electric furnace. X-ray diffraction analysis showed that the LaAlO{sub 3} films were amorphous even after the annealing process. No hysteretic characteristics were observed in the capacitance--voltage (C--V) measurement and the dielectric constant of the LaAlO{sub 3} films was estimated to be 21--25. It was also found that the leakage current density decreased by about three orders of magnitude after the annealing process. On these films, Sr{sub 0.8}Bi{sub 2.2}Ta{sub 2}O{sub 9} films with 210 nm thickness were deposited by a sol--gel method. All samples annealed in O{sub 2} atmosphere at temperatures ranging from 650 to 750{sup o}C showed hysteretic C--V characteristics, and the memory window width in the sample annealed at 750{sup o}C for 30 min was about 3.0 V for a voltage sweep of {+-}10 V. It was also found that the capacitance values biased in the hysteresis loop were unchanged over 12 h. {copyright} 2001 American Institute of Physics.
- Sponsoring Organization:
- (US)
- OSTI ID:
- 40230711
- Journal Information:
- Applied Physics Letters, Vol. 79, Issue 6; Other Information: DOI: 10.1063/1.1380246; Othernumber: APPLAB000079000006000806000001; 036125APL; PBD: 6 Aug 2001; ISSN 0003-6951
- Publisher:
- The American Physical Society
- Country of Publication:
- United States
- Language:
- English
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