Enhancement of room temperature dislocation-related photoluminescence of electron irradiated silicon

Journal Article · Mon Jan 21 04:00:00 EST 2013 · Journal of Applied Physics

DOI:https://doi.org/10.1063/1.4776779· OSTI ID:22102222

Luelue, Xiang; Dongsheng, Li; Lu, Jin; Deren, Yang ^[1]; Shuming, Wang ^[2]

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1. State Key Laboratory of Silicon Materials and Department of Materials Science and Engineering, Zhejiang University, Hangzhou 310027 (China)
2. National Analysis and Testing Center for Nonferrous Metals and Electronic Materials, Beijing 100088 (China)

In this paper, we have investigated the room temperature dislocation-related photoluminescence of electron irradiated silicon. It is found that high temperature annealing can enhance the D1 line emission measured at room temperature. The abnormal peak shift of D1 line on the dependence of temperatures reveals the reconstruction of D1 luminescence center. It is suggested that the high temperature annealing could cause the transformation of the dislocation-point defect structure, so that the D1 luminescence is enhanced and stabilized.

• OSTI ID: 22102222
• Journal Information: Journal of Applied Physics, Journal Name: Journal of Applied Physics Journal Issue: 3 Vol. 113; ISSN JAPIAU; ISSN 0021-8979
• Country of Publication: United States
• Language: English

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
ANNEALING
DISLOCATIONS
ELECTRON BEAMS
PHOTOLUMINESCENCE
PHYSICAL RADIATION EFFECTS
POINT DEFECTS
SEMICONDUCTOR MATERIALS
SILICON
TEMPERATURE RANGE 0273-0400 K
TRANSFORMATIONS