Dislocation-Related Photoluminescence in Silicon Implanted with Germanium Ions

Journal Article · Fri Feb 15 04:00:00 EST 2019 · Semiconductors

DOI:https://doi.org/10.1134/S1063782619020234· OSTI ID:22945074

Kalyadin, A. E.; Sakharov, V. I.; Serenkov, I. T.; Shek, E. I. ^[1]; Parshin, E. O.; Melesov, N. S.; Simakin, C. G. ^[2]

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1. Ioffe Institute (Russian Federation)
2. Yaroslavl Branch, Institute of Physics and Technology, Russian Academy of Sciences (Russian Federation)

The influence exerted by the conditions of the post-implantation annealing of silicon implanted with germanium ions on how luminescence centers are formed is studied. Measurements by the technique of the Rutherford backscattering of medium- and high-energy ions demonstrates that implantation with 1-MeV germanium ions at a dose of 1.5 × 10{sup 14} cm{sup –2} does not lead to the amorphization of single-crystal silicon. It is found that subsequent high-temperature annealing of the implanted samples in a chlorine-containing atmosphere at a temperature of 1100°C for 0.5–1.5 h gives rise to so-called D1 and D2 dislocation-related luminescence lines with wavelengths of 1.54 and 1.42 μm. With increasing annealing duration, the intensity of the D1 line decreases and that of D2 remains constant, but the D1 line dominates in all the spectra. The possible factors responsible for a decrease in the intensity of the D1 line and, in particular, the diffusion of germanium atoms and the formation of a silicon–germanium solid solution are discussed.

• OSTI ID: 22945074
• Journal Information: Semiconductors, Journal Name: Semiconductors Journal Issue: 2 Vol. 53; ISSN SMICES; ISSN 1063-7826
• Country of Publication: United States
• Language: English

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
AMORPHOUS STATE
ANNEALING
CHLORINE
DIFFUSION
DISLOCATIONS
GERMANIUM
GERMANIUM IONS
MEV RANGE
MONOCRYSTALS
PHOTOLUMINESCENCE
RUTHERFORD BACKSCATTERING SPECTROSCOPY
SILICON
SOLID SOLUTIONS
SPECTRA
TEMPERATURE RANGE 0400-1000 K
WAVELENGTHS