Photoluminescence in silicon implanted with silicon ions at amorphizing doses

Journal Article · Thu Sep 15 04:00:00 EDT 2011 · Semiconductors

DOI:https://doi.org/10.1134/S1063782611090181· OSTI ID:22004745

Kalyadin, A E; Kyutt, R N; Sakharov, V I; Serenkov, I T; Shek, E I; Afrosimov, V V ^[1]; Tetel'baum, D I ^[2]

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1. Russian Academy of Sciences, Ioffe Physical Technical Institute (Russian Federation)
2. Lobachevsky State University, Physicotechnical Research Institute (Russian Federation)

Luminescent and structural properties of n-FZ-Si and n-Cz-Si implanted with Si ions at amorphizing doses and annealed at 1100 Degree-Sign C in a chlorine-containing atmosphere have been studied. An analysis of proton Rutherford backscattering spectra of implanted samples demonstrated that an amorphous layer is formed, and its position and thickness depend on the implantation dose. An X-ray diffraction analysis revealed that defects of the interstitial type are formed in the samples upon annealing. Photoluminescence spectra measured at 78 K and low excitation levels are dominated by the dislocation-related line D1, which is also observed at 300 K. The peak position of this line, its full width at half-maximum, and intensity depend on the conduction type of Si and implantation dose. As the luminescence excitation power is raised, a continuous band appears in the spectrum. A model is suggested that explains the fundamental aspects of the behavior of the photoluminescence spectra in relation to the experimental conditions.

• OSTI ID: 22004745
• Journal Information: Semiconductors, Journal Name: Semiconductors Journal Issue: 9 Vol. 45; ISSN SMICES; ISSN 1063-7826
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
CHLORINE
DEFECTS
DISLOCATIONS
DOSES
EXCITATION
LAYERS
PEAKS
PHOTOLUMINESCENCE
PROTONS
RUTHERFORD BACKSCATTERING SPECTROSCOPY
SILICON
SILICON IONS
SPECTRA
X-RAY DIFFRACTION