Sub-bandgap luminescence centers in silicon created by self-ion implantation and thermal annealing

Journal Article · Tue Jun 15 04:00:00 EDT 2010 · Journal of Applied Physics

DOI:https://doi.org/10.1063/1.3436572· OSTI ID:21476307

Yu, Yang ^[1]; Jiming, Bao ^[2]; Chong, Wang ^[3]; Aziz, Michael J ^[4]

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1. Institute of optoelectronic information materials, Yunnan University, 2 Northern Cuihu Road, Kunming, Yunnan Province 650091 (China)
2. Department of Electrical and Computer Engineering, University of Houston, 4800 Calhoun Road, Houston, Texas 77204 (United States)
3. Institute of Engineering and Technology, Yunnan University, 2 Northern Cuihu Road, Kunming, Yunnan Province 650091 (China)
4. School of Engineering and Applied Sciences, Harvard University, 29 Oxford Street, Cambridge, Massachusetts 02138 (United States)

We investigated the conditions for the generation of silicon sub-bandgap luminescence centers (W, R, and D1 centers) in p-type silicon wafer by self-ion implantation and thermal annealing. Luminescence centers and their spatial distributions were probed by measuring their photoluminescence (PL) spectra before and after sequential removal of top surface layers. It was demonstrated that the optimal annealing temperature for W-line is {approx}300 deg. C. The strongest R-line is observed in the sample with a dose of 10{sup 14} cm{sup -2} and at an annealing temperature of 700 deg. C. The creation of D1-band requires a minimum dose of 3x10{sup 14} cm{sup -2} and a minimum annealing temperature of 800 deg. C. PL versus etch depth measurements indicate that within the studied dose range, the W-line luminescence centers are distributed beyond twice the ion projected range (R{sub p{approx_equal}}400 nm), R-line centers are located slightly deeper than the R{sub p}, and D1 related defects are distributed at about the same depth as R{sub p}. These results provide valuable information for fabricating the silicon-based infrared light sources.

• OSTI ID: 21476307
• Journal Information: Journal of Applied Physics, Journal Name: Journal of Applied Physics Journal Issue: 12 Vol. 107; ISSN JAPIAU; ISSN 0021-8979
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
ANNEALING
CRYSTAL DEFECTS
CRYSTAL STRUCTURE
DISTRIBUTION
ELECTROMAGNETIC RADIATION
ELECTRONIC STRUCTURE
ELEMENTS
EMISSION
EMISSION SPECTRA
ENERGY GAP
HEAT TREATMENTS
INFRARED RADIATION
ION IMPLANTATION
LAYERS
LUMINESCENCE
MATERIALS
P-TYPE CONDUCTORS
PHOTOLUMINESCENCE
PHOTON EMISSION
PHYSICAL RADIATION EFFECTS
POINT DEFECTS
RADIATION EFFECTS
RADIATIONS
SEMICONDUCTOR MATERIALS
SEMIMETALS
SILICON
SPATIAL DISTRIBUTION
SPECTRA
SURFACES