Photoluminescence in silicon implanted with erbium ions at an elevated temperature

Journal Article · Mon Aug 15 04:00:00 EDT 2011 · Semiconductors

DOI:https://doi.org/10.1134/S1063782611080197· OSTI ID:22004761

Kalyadin, A E; Shek, E I; Sakharov, V I; Serenkov, I T ^[1]; Vdovin, V I ^[2]; Parshin, E O; Makoviichuk, M I ^[3]

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1. Russian Academy of Sciences, Ioffe Physical Technical Institute (Russian Federation)
2. St. Petersburg University, Fock Research Institute of Physics (Russian Federation)
3. Russian Academy of Sciences, Yaroslavl Branch, Institute of Physics and Technology (Russian Federation)

Photoluminescence spectra of n-type silicon upon implantation with erbium ions at 600 Degree-Sign C and oxygen ions at room temperature and subsequent annealings at 1100 Degree-Sign C in a chlorine-containing atmosphere have been studied. Depending on the annealing duration, photoluminescence spectra at 80 K are dominated by lines of the Er{sup 3+} ion or dislocation-related luminescence. The short-wavelength shift of the dislocation-related luminescence line observed at this temperature is due to implantation of erbium ions at an elevated temperature. At room temperature, lines of erbium and dislocation-related luminescence are observed in the spectra, but lines of near-band-edge luminescence predominate.

• OSTI ID: 22004761
• Journal Information: Semiconductors, Journal Name: Semiconductors Journal Issue: 8 Vol. 45; ISSN SMICES; ISSN 1063-7826
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ANNEALING
ATMOSPHERES
CHLORINE
DISLOCATIONS
ERBIUM
ERBIUM IONS
OXYGEN IONS
PHOTOLUMINESCENCE
SILICON
SPECTRA
WAVELENGTHS