The origin of 0.78 eV line of the dislocation related luminescence in silicon

Journal Article · Sat Sep 15 04:00:00 EDT 2012 · Journal of Applied Physics

DOI:https://doi.org/10.1063/1.4754825· OSTI ID:22089454

Luelue, Xiang; Dongsheng, Li; Lu, Jin; Deren, Yang ^[1]; Pivac, Branko ^[2]

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1. State Key Laboratory of Silicon Materials and Department of Materials Science and Engineering, Zhejiang University, Hangzhou 310027 (China)
2. Rudjer Boskovic Institute, Bijenicka 54, HR-10000 Zagreb (Croatia)

In this paper, the 0.78 eV line of the dislocation related luminescence in the electron-irradiated silicon has been investigated. It is found that the 0.78 eV line only exists in float zone silicon samples, and its intensity could be largely enhanced by high temperature and long time annealing while no 0.78 eV line was found in Czochralski silicon. The activation energy of 0.78 eV line in floating-zone silicon is {approx}13 meV, indicating a different nature from that of D1/D2 lines which can be ascribed to specific reconstructed dislocations which could be easily affected by point defects and temperature.

• OSTI ID: 22089454
• Journal Information: Journal of Applied Physics, Journal Name: Journal of Applied Physics Journal Issue: 6 Vol. 112; ISSN JAPIAU; ISSN 0021-8979
• Country of Publication: United States
• Language: English

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
ACTIVATION ENERGY
ANNEALING
CRYSTAL GROWTH
DISLOCATIONS
ELECTRON BEAMS
PHOTOLUMINESCENCE
PHYSICAL RADIATION EFFECTS
POINT DEFECTS
SEMICONDUCTOR MATERIALS
SILICON
TRANSMISSION ELECTRON MICROSCOPY