Mn solid solutions in self-assembled Ge/Si (001) quantum dot heterostructures

Journal Article · Mon Dec 10 00:00:00 EST 2012 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.4770384· OSTI ID:22089592

Kassim, J.; Nolph, C.; Reinke, P.; Floro, J. ^[1]; Jamet, M. ^[2]

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1. Department of Materials Science and Engineering, University of Virginia, Charlottesville, Virginia 22904 (United States)
2. Institut Nanosciences et Cryogenie/SP2M, CEA-UJF, F-38054 Grenoble (France)

Heteroepitaxial Ge{sub 0.98}Mn{sub 0.02} quantum dots (QDs) on Si (001) were grown by molecular beam epitaxy. The standard Ge wetting layer-hut-dome-superdome sequence was observed, with no indicators of second phase formation in the surface morphology. We show that Mn forms a dilute solid solution in the Ge quantum dot layer, and a significant fraction of the Mn partitions into a sparse array of buried, Mn-enriched silicide precipitates directly underneath a fraction of the Ge superdomes. The magnetic response from the ultra-thin film indicates the absence of robust room temperature ferromagnetism, perhaps due to anomalous intermixing of Si into the Ge quantum dots.

• OSTI ID: 22089592
• Journal Information: Applied Physics Letters, Vol. 101, Issue 24; Other Information: (c) 2012 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

77 NANOSCIENCE AND NANOTECHNOLOGY
FERROMAGNETISM
GERMANIUM COMPOUNDS
LAYERS
MAGNETIC SEMICONDUCTORS
MANGANESE COMPOUNDS
MOLECULAR BEAM EPITAXY
PRECIPITATION
QUANTUM DOTS
SILICIDES
SILICON
SOLID SOLUTIONS
SUBSTRATES
SURFACES
TEMPERATURE RANGE 0273-0400 K
THIN FILMS