Trimodal island distribution of Ge nanodots on (001)Si

Journal Article · Fri Sep 15 04:00:00 EDT 2006 · Journal of Applied Physics

DOI:https://doi.org/10.1063/1.2336508· OSTI ID:20884748

Balle, Jacob; Hansen, John Lundsgaard; Larsen, Arne Nylandsted ^[1]

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1. Institute of Physics and Astronomy, University of Aarhus, DK-8000 Aarhus C (Denmark)

Molecular beam epitaxy (MBE) grown Ge nanodots are found to come in a clear trimodal island distribution of huts, pyramids, and domes when grown on (001)Si at 550 deg. C. The island types appear in this order as Ge coverage increases and for a certain coverage all three types are found to coexist at this growth temperature. Previously Ge nanodots have mostly been divided into huts and domes at growth temperatures below 600 deg. C, or pyramids and domes above 600 deg. C. The (105) faceted pyramidal and elongated huts and the multifaceted domes are well known, but a distinction has not previously been seen between huts and a separate size distribution of similarly (105)-faceted pyramidal nanodots twice the size of huts, at temperatures below 600 deg. C. The 20-25 nm wide huts also appear to be the smallest obtainable self-assembled Ge dots on (001)Si, in accordance with predictions based on Si{sub 1-x}Ge{sub x} nanodots on (001)Si. They are about a factor of two too large for quantum dot applications.

• OSTI ID: 20884748
• Journal Information: Journal of Applied Physics, Journal Name: Journal of Applied Physics Journal Issue: 6 Vol. 100; ISSN JAPIAU; ISSN 0021-8979
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
CRYSTAL GROWTH
GERMANIUM
MAGNETIC ISLANDS
MOLECULAR BEAM EPITAXY
MOLECULAR STRUCTURE
QUANTUM DOTS
SEMICONDUCTOR MATERIALS
SILICON
TEMPERATURE DEPENDENCE
TEMPERATURE RANGE 0400-1000 K