Barrierless self-assembly of Ge quantum dots on Si(001) substrates with high local vicinality
- Center for Functional Nanomaterials, Brookhaven National Laboratory, Upton, New York 11973 (United States)
In Ge heteroepitaxy on vicinal Si(001), miscut by 4.8 deg. toward [100], pyramid-shaped faceted quantum dot islands ('huts') form continuously from individual (105) facets on a wetting layer of coexisting (105) and (001) segments. Via this barrierless kinetic route the first three-dimensional islands rapidly form wherever there are substantial local gradients along <100> in-plane directions.
- OSTI ID:
- 20706381
- Journal Information:
- Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 16 Vol. 87; ISSN APPLAB; ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
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