Si-capping of Ge nanohuts on Si(001) analyzed by scanning tunneling microscopy and the finite element method
- Department of Solid Mechanics, Materials and Systems, The Fleischman Faculty of Engineering, Tel Aviv University, Ramat Aviv, Tel Aviv 69978 (Israel)
Ge hut nanocrystals were grown on an Si(001) surface and Si-capped by gas-source molecular-beam epitaxy. Growth and capping at 430 deg. C were observed in real time by scanning tunneling microscopy, and analyzed by the finite element method. Observations made here of three-dimensional Si-cap growth (in the shape of pyramids and huts) on Ge, similar to the Ge growth on Si(001), are consistent with energetic arguments based on finite elements in the framework of linear elasticity. These observations are in contrast with the higher-temperature behavior, where Si preferentially sticks to the Ge nanocrystal facets, causing them to develop large flat (001) tops and a reduced height-base ratio.
- OSTI ID:
- 20632776
- Journal Information:
- Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 10 Vol. 85; ISSN APPLAB; ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
Similar Records
Trimodal island distribution of Ge nanodots on (001)Si
An initial phase of Ge hut array formation at low temperature on Si(001)
On atomic structure of Ge huts growing on the Ge/Si(001) wetting layer
Journal Article
·
Fri Sep 15 00:00:00 EDT 2006
· Journal of Applied Physics
·
OSTI ID:20884748
An initial phase of Ge hut array formation at low temperature on Si(001)
Journal Article
·
Sun May 15 00:00:00 EDT 2011
· Journal of Applied Physics
·
OSTI ID:21560273
On atomic structure of Ge huts growing on the Ge/Si(001) wetting layer
Journal Article
·
Sat Sep 14 00:00:00 EDT 2013
· Journal of Applied Physics
·
OSTI ID:22218066