An initial phase of Ge hut array formation at low temperature on Si(001)

Journal Article · Sun May 15 04:00:00 EDT 2011 · Journal of Applied Physics

DOI:https://doi.org/10.1063/1.3592979· OSTI ID:21560273

Arapkina, Larisa V; Yuryev, Vladimir A ^[1]

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1. A. M. Prokhorov General Physics Institute of the Russian Academy of Sciences, 38 Vavilov Street, Moscow, 119991 (Russian Federation)

We report a direct STM observation of Ge hut array nucleation on the Si(001) surface during ultrahigh vacuum molecular-beam epitaxy at 360 deg. C. Nuclei of pyramids and wedges have been observed on the wetting layer MxN patches starting from the coverage of about 5.1 A ({approx}3.6 ML). Further development of hut arrays consists of simultaneous growth of the formerly appeared clusters and nucleation of new ones resulting in gradual rise of hut number density with increasing surface coverage. Huts nucleate reconstructing the patch surface from the usual c(4x2) or p(2x2) structure to one of two recently described formations composed by epitaxially oriented Ge dimer pairs and chains of four dimers.

• OSTI ID: 21560273
• Journal Information: Journal of Applied Physics, Journal Name: Journal of Applied Physics Journal Issue: 10 Vol. 109; ISSN JAPIAU; ISSN 0021-8979
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
CHAINS
CRYSTAL GROWTH METHODS
DENSITY
ELEMENTS
EPITAXY
GERMANIUM
LAYERS
MATERIALS
METALS
MICROSCOPY
MOLECULAR BEAM EPITAXY
NUCLEI
PHYSICAL PROPERTIES
SCANNING TUNNELING MICROSCOPY
SEMICONDUCTOR MATERIALS
SEMIMETALS
SILICON
SURFACES
TEMPERATURE RANGE
TEMPERATURE RANGE 0400-1000 K