Probe effect in scanning tunneling microscopy on Si(001) low-temperature phases

Journal Article · Wed Dec 15 04:00:00 EST 2004 · Physical Review. B, Condensed Matter and Materials Physics

DOI:https://doi.org/10.1103/PhysRevB.70.235411· OSTI ID:20662286

Yoshida, Shoji; Kimura, Tomohiko; Takeuchi, Osamu; Hata, Kenji; Oigawa, Haruhiro; Shigekawa, Hidemi ^[1]; Nagamura, Toshihiko ^[2]; Sakama, Hiroshi ^[3]

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1. Institute of Applied Physics, 21st Century COE, NANO project, CREST, University of Tsukuba, Tsukuba 305-8573 (Japan)
2. Unisoku Co. Ltd., Hirakata, Osaka 573-0131 (Japan)
3. Department of Physics, Sophia University, Tokyo 102-8554 (Japan)

The probe effect, the effect of parameters in scanning tunneling microscopy (STM) measurement, on the Si(100) surface with two competing phases in delicate balance, was investigated systematically by reexamining its influence on the Si(100) dimer flip-flop motions at 5 and 80 K. On the basis of the results, the complex array of the phenomena of the Si(100) surface structures was comprehended. The phase transition between c(4x2) and p(2x2) structures below {approx}40 K was studied by STM, as well as by low-energy electron diffraction, and the appearance of the p(2x2) structure at a reduced probe effect was confirmed. In these investigations, a phase with long-range ordering of the c(4x2) and p(2x2) structures was observed.

• OSTI ID: 20662286
• Journal Information: Physical Review. B, Condensed Matter and Materials Physics, Journal Name: Physical Review. B, Condensed Matter and Materials Physics Journal Issue: 23 Vol. 70; ISSN 1098-0121
• Country of Publication: United States
• Language: English

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
ELECTRON DIFFRACTION
PHASE TRANSFORMATIONS
PROBES
SCANNING TUNNELING MICROSCOPY
SEMICONDUCTOR MATERIALS
SILICON
SURFACES
TEMPERATURE RANGE 0000-0013 K
TEMPERATURE RANGE 0065-0273 K