Imaging of dimer atoms of Si(100) with the scanning tunneling microscope

Journal Article · · Journal of Vacuum Science and Technology. B, Microelectronics Processing and Phenomena; (United States)

DOI:https://doi.org/10.1116/1.585537· OSTI ID:5227631

Sugihara, Kazuyoski; Sakai, A; Kato, Y; Akama, Y; Shoda, N ^[1]; Tokumoto, H; Ono, M ^[2]

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1. Toshiba ULSI Research Center, Kawasaki (Japan)
2. Electrotechnical Lab., Ibaraki (Japan)

This paper describes atomic structure of dimers of Si(100) investigated with the use of scanning tunneling microscope (STM). In contrast to the usual bean-shaped image of the dimer, individual dimer atoms are clearly resolved in the occupied state images. This observation of dimer atoms cannot be explained by current dimer models and implies some effects of tip-surface interactions in STM imaging. Possible amplification mechanisms of STM corrugation by an elastic deformation of the tip or the sample are discussed.

• OSTI ID: 5227631
• Journal Information: Journal of Vacuum Science and Technology. B, Microelectronics Processing and Phenomena; (United States), Journal Name: Journal of Vacuum Science and Technology. B, Microelectronics Processing and Phenomena; (United States) Vol. 9:2; ISSN 0734-211X; ISSN JVTBD
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360606* -- Other Materials-- Physical Properties-- (1992-)
ATOMIC MODELS
DEFORMATION
DIMERS
ELASTICITY
ELECTRONIC STRUCTURE
ELEMENTS
INTERACTIONS
MATHEMATICAL MODELS
MECHANICAL PROPERTIES
MICROSCOPY
SEMIMETALS
SILICON
TENSILE PROPERTIES