Dimer-flipping-assisted diffusion on a Si(001) surface
The binding sites and diffusion pathways of Si adatoms on a c(4x2) reconstructed Si(001) surface are investigated by a tight-binding method with an environment-dependent silicon potential in conjunction with ab initio calculations using the Car--Parrinello method. A new diffusion pathway along the trough edge driven by dimer flipping is found with a barrier of 0.74 eV, comparable to that of 0.68 eV along the top of the dimer rows.
- Sponsoring Organization:
- (US)
- OSTI ID:
- 40205334
- Journal Information:
- Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 25 Vol. 77; ISSN 0003-6951
- Publisher:
- The American Physical Society
- Country of Publication:
- United States
- Language:
- English
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