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Title: Dimer-flipping-assisted diffusion on a Si(001) surface

Abstract

The binding sites and diffusion pathways of Si adatoms on a c(4x2) reconstructed Si(001) surface are investigated by a tight-binding method with an environment-dependent silicon potential in conjunction with ab initio calculations using the Car--Parrinello method. A new diffusion pathway along the trough edge driven by dimer flipping is found with a barrier of 0.74 eV, comparable to that of 0.68 eV along the top of the dimer rows.

Authors:
; ; ; ;
Publication Date:
Sponsoring Org.:
(US)
OSTI Identifier:
40205334
Resource Type:
Journal Article
Journal Name:
Applied Physics Letters
Additional Journal Information:
Journal Volume: 77; Journal Issue: 25; Other Information: DOI: 10.1063/1.1336167; Othernumber: APPLAB000077000025004184000001; 034101APL; PBD: 18 Dec 2000; Journal ID: ISSN 0003-6951
Publisher:
The American Physical Society
Country of Publication:
United States
Language:
English
Subject:
71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; DIFFUSION; DIMERS; PHYSICS; SILICON

Citation Formats

Zi, J, Min, B J, Lu, Y, Wang, C Z, and Ho, K M. Dimer-flipping-assisted diffusion on a Si(001) surface. United States: N. p., 2000. Web. doi:10.1063/1.1336167.
Zi, J, Min, B J, Lu, Y, Wang, C Z, & Ho, K M. Dimer-flipping-assisted diffusion on a Si(001) surface. United States. doi:10.1063/1.1336167.
Zi, J, Min, B J, Lu, Y, Wang, C Z, and Ho, K M. Mon . "Dimer-flipping-assisted diffusion on a Si(001) surface". United States. doi:10.1063/1.1336167.
@article{osti_40205334,
title = {Dimer-flipping-assisted diffusion on a Si(001) surface},
author = {Zi, J and Min, B J and Lu, Y and Wang, C Z and Ho, K M},
abstractNote = {The binding sites and diffusion pathways of Si adatoms on a c(4x2) reconstructed Si(001) surface are investigated by a tight-binding method with an environment-dependent silicon potential in conjunction with ab initio calculations using the Car--Parrinello method. A new diffusion pathway along the trough edge driven by dimer flipping is found with a barrier of 0.74 eV, comparable to that of 0.68 eV along the top of the dimer rows.},
doi = {10.1063/1.1336167},
journal = {Applied Physics Letters},
issn = {0003-6951},
number = 25,
volume = 77,
place = {United States},
year = {2000},
month = {12}
}