Growth mechanism of Si dimer rows on Si(001)
Book
·
OSTI ID:488995
- Joint Research Center for Atom Technology, Tsukuba, Ibaraki (Japan)
Initial processes of Si dimer row growth on Si(001) surface is studied by the first principles molecular dynamics method. The authors optimize several different ad-Si clusters composed of one to four atoms on the surface and estimate activation energies for some important growth processes. At lower temperatures, a metastable ad-Si dimer in the trough between substrate dimer rows attracts monomers and tends to grow into a short diluted-dimer row in the perpendicular direction to the substrate dimer rows. In high temperatures as ad-Si dimers can diffuse, a direct dimer condensation process is possible to elongate the dense-dimer rows also in the perpendicular direction.
- Sponsoring Organization:
- New Energy and Industrial Technology Development Organization, Tokyo (Japan)
- OSTI ID:
- 488995
- Report Number(s):
- CONF-951155--; ISBN 1-55899-311-8
- Country of Publication:
- United States
- Language:
- English
Similar Records
Atomic-scale dynamics of atoms and dimers on the Si(001) surface
Ad-Dimer Diffusion between Trough and Dimer Row on Si(100)
Symmetry and stability of solitary dimer rows on Si(100)
Conference
·
Mon Dec 30 23:00:00 EST 1996
·
OSTI ID:434456
Ad-Dimer Diffusion between Trough and Dimer Row on Si(100)
Journal Article
·
Mon Nov 30 23:00:00 EST 1998
· Physical Review Letters
·
OSTI ID:289168
Symmetry and stability of solitary dimer rows on Si(100)
Journal Article
·
Mon Apr 26 00:00:00 EDT 1993
· Physical Review Letters; (United States)
·
OSTI ID:6515470