Impact of template variations on shape and arrangement of Si/Ge quantum dot arrays

Journal Article · Mon Apr 07 04:00:00 EDT 2008 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.2907196· OSTI ID:21101984

Dais, C; Solak, H H ^[1]; Mueller, E ^[1]; Gruetzmacher, D ^[2]

---

1. Laboratory for Micro- and Nanotechnology, Paul Scherrer Institut, Villigen-PSI CH-5232 (Switzerland)
2. Institute of Bio- and Nanosystems-1: Semiconductor Nanoelectronics, Forschungszentrum Juelich, Juelich 52425 (Germany)

Templated self-assembly allows the fabrication of quantum dot (QD) arrays for use in nanoelectronic devices. Here, we show the strong dependence of the shape and arrangement of QDs on the template structures. Arrays of etched pits are patterned on Si (100) substrates by extreme ultraviolet interference lithography on which Si/Ge layers are grown in a molecular beam epitaxy system. Single Ge dome clusters or quantum molecules consisting of four Ge hut clusters are obtained by a change of the pit diameter. Both arrays exhibit a narrow size distribution and exact alignment of the dots. In addition, multiple stacking of these arrays is demonstrated.

• OSTI ID: 21101984
• Journal Information: Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 14 Vol. 92; ISSN APPLAB; ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
CRYSTAL GROWTH
ETCHING
EXTREME ULTRAVIOLET RADIATION
GERMANIUM
INTERFERENCE
LAYERS
MOLECULAR BEAM EPITAXY
QUANTUM DOTS
SEMICONDUCTOR MATERIALS
SILICON
SPECTROSCOPY
SUBSTRATES