Electroluminescence of heavily doped p-type porous silicon under electrochemical oxidation in galvanostatic regime

Journal Article · Fri Mar 01 04:00:00 EST 1996 · Journal of the Electrochemical Society

DOI:https://doi.org/10.1149/1.1836581· OSTI ID:220884

Billat, S ^[1]

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1. Univ. J. Fourier de Grenoble, Saint Martin d`Heres (France). Lab. de Spectrometrie Physique

Visible light emission is obtained during anodic oxidation of heavily doped p-type (P{sup +}) porous silicon layers. Similar characteristics are observed for the electroluminescence (EL) on lightly doped substrates (P{sup {minus}}). This indicates that the coarser structure of the heavily doped samples also presents a thin structure, with crystallites of quantum sizes responsible for the emission. For the first time the EL and photoluminescence phenomena of this type of material are studied as a function of the oxidation level. So it is possible to separate the passivation effect due to the oxide growth and the carrier injection process into the crystallites. The main characteristics of the light emission are discussed with a simple model which underlines the key role of the injection of carriers (for the EL) and its significance for the oxidation process. The vanishing of the EL, which is observed under anodic oxidation, seems to be related in the higher anodizing potential to some depassivation of the porous silicon surface.

• Sponsoring Organization: USDOE
• OSTI ID: 220884
• Journal Information: Journal of the Electrochemical Society, Journal Name: Journal of the Electrochemical Society Journal Issue: 3 Vol. 143; ISSN 0013-4651; ISSN JESOAN
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
DOPED MATERIALS
ELECTROLUMINESCENCE
MATHEMATICAL MODELS
OXIDATION
P-TYPE CONDUCTORS
SILICON