Electroluminescence of n-type porous silicon electrodes
Conference
·
OSTI ID:370825
- Universiteit Utrecht (Netherlands)
Electroluminescence can be generated in n-type porous silicon in solution by peroxydisulphate reductions. It has tacitly been assumed that the SO{sub 4}{sup -} radical anion, formed in the first step of the reduction, injects a hole into the valence band of the porous semiconductor. The hole should subsequently undergo radiative recombination with a conduction band electron. However, we have been unable to find evidence for free hole injection from SO{sub 4}{sup -}. Two techniques were employed: photocurrent quantum efficiency measurements with p-type crystalline and porous silicon electrodes and minority carrier injection studies using the p-n junction technique. The consequences of these results for the mechanism of light emission from porous silicon will be discussed.
- OSTI ID:
- 370825
- Report Number(s):
- CONF-960376--
- Country of Publication:
- United States
- Language:
- English
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