Ultraviolet electroluminescence from ZnO/p-Si heterojunctions
- State Key Laboratory of Silicon Materials, Zhejiang University, Hangzhou 310027 (China)
Nominally undoped ZnO films were deposited by reactive sputtering on the lightly boron-doped (p{sup -}) and heavily boron-doped (p{sup +}) silicon substrates. The sputtered ZnO films were identified to be highly <002> oriented in crystallinity and n type in electrical conductivity. The current-voltage (I-V) characteristics revealed that the ZnO/p{sup -}-Si heterojunction exhibited well-defined rectifying behavior while the ZnO/p{sup +}-Si heterojunction did not possess rectifying function. As for the ZnO/p{sup +}-Si heterojunction, it was electroluminescent to a certain extent in the visible region under sufficient forward bias with the positive voltage on the silicon substrate, while it emitted ultraviolet light characteristics of near-band-edge emission of ZnO under the reverse bias, which significantly dominated the visible emission. In contrast to the ZnO/p{sup +}-Si heterojunction, the ZnO/p{sup -}-Si heterojunction did not exhibit detectable electroluminescence (EL) under either forward or reverse bias. The I-V characteristics and EL mechanism of the above-mentioned heterojunctions have been tentatively explained in terms of the energy-band structures of the heterojunctions.
- OSTI ID:
- 20982713
- Journal Information:
- Journal of Applied Physics, Vol. 101, Issue 5; Other Information: DOI: 10.1063/1.2464185; (c) 2007 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0021-8979
- Country of Publication:
- United States
- Language:
- English
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