Ultraviolet electroluminescence from ZnO/p-Si heterojunctions

Journal Article · Thu Mar 01 04:00:00 EST 2007 · Journal of Applied Physics

DOI:https://doi.org/10.1063/1.2464185· OSTI ID:20982713

Chen, Peiliang; Ma, Xiangyang; Yang, Deren ^[1]

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1. State Key Laboratory of Silicon Materials, Zhejiang University, Hangzhou 310027 (China)

Nominally undoped ZnO films were deposited by reactive sputtering on the lightly boron-doped (p{sup -}) and heavily boron-doped (p{sup +}) silicon substrates. The sputtered ZnO films were identified to be highly <002> oriented in crystallinity and n type in electrical conductivity. The current-voltage (I-V) characteristics revealed that the ZnO/p{sup -}-Si heterojunction exhibited well-defined rectifying behavior while the ZnO/p{sup +}-Si heterojunction did not possess rectifying function. As for the ZnO/p{sup +}-Si heterojunction, it was electroluminescent to a certain extent in the visible region under sufficient forward bias with the positive voltage on the silicon substrate, while it emitted ultraviolet light characteristics of near-band-edge emission of ZnO under the reverse bias, which significantly dominated the visible emission. In contrast to the ZnO/p{sup +}-Si heterojunction, the ZnO/p{sup -}-Si heterojunction did not exhibit detectable electroluminescence (EL) under either forward or reverse bias. The I-V characteristics and EL mechanism of the above-mentioned heterojunctions have been tentatively explained in terms of the energy-band structures of the heterojunctions.

• OSTI ID: 20982713
• Journal Information: Journal of Applied Physics, Journal Name: Journal of Applied Physics Journal Issue: 5 Vol. 101; ISSN JAPIAU; ISSN 0021-8979
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
BORON
DEPOSITION
DOPED MATERIALS
ELECTRIC CONDUCTIVITY
ELECTRIC POTENTIAL
ELECTROLUMINESCENCE
HETEROJUNCTIONS
SEMICONDUCTOR MATERIALS
SILICON
SPUTTERING
SUBSTRATES
THIN FILMS
ULTRAVIOLET RADIATION
ZINC OXIDES