Ultraviolet-enhanced light emitting diode employing individual ZnO microwire with SiO{sub 2} barrier layers

Journal Article · Mon May 25 04:00:00 EDT 2015 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.4921919· OSTI ID:22402489

Xu, Yingtian ^[1]; Xu, Li ^[2]; Dai, Jun ^[3]; Ma, Yan; Chu, Xianwei; Zhang, Yuantao; Du, Guotong; Zhang, Baolin; Yin, Jingzhi ^[1]

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1. State Key Laboratory on Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, 2699 Qianjin Street, Changchun 130012 (China)
2. State Key Laboratory of High Power Semiconductor Laser, Changchun University of Science and Technology, Changchun 130022 (China)
3. State Key Laboratory of Bioelectronics, Southeast University, Nanjing 210096 (China)

This paper details the fabrication of n-ZnO single microwire (SMW)-based high-purity ultraviolet light-emitting diodes (UV-LEDs) with an added SiO{sub 2} barrier layer on the p-Si substrate. However, the current-voltage (I-V) curve exhibited non-ideal rectifying characteristics. Under forward bias, both UV and visible emissions could be detected by electroluminescence (EL) measurement. When bias voltage reached 60 V at room temperature, a UV emission spike occurred at 390 nm originating from the n-ZnO SMW. Compared with the EL spectrum of the n-ZnO SMW/p-Si heterojunction device without the SiO{sub 2} barrier layer, we saw improved UV light extraction efficiency from the current-blocking effect of the SiO{sub 2} layer. The intense UV emission in the n-ZnO SMW/SiO{sub 2}/p-Si heterojunction indicated that the SiO{sub 2} barrier layer can restrict the movement of electrons as expected and result in effective electron-hole recombination in ZnO SMW.

• OSTI ID: 22402489
• Journal Information: Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 21 Vol. 106; ISSN APPLAB; ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
71 CLASSICAL AND QUANTUM MECHANICS
GENERAL PHYSICS
DEPLETION LAYER
ELECTRIC CONDUCTIVITY
ELECTROLUMINESCENCE
ELECTRONS
HETEROJUNCTIONS
LIGHT EMITTING DIODES
RECOMBINATION
SILICA
SILICON OXIDES
SUBSTRATES
TEMPERATURE RANGE 0273-0400 K
ULTRAVIOLET RADIATION
ZINC OXIDES