Reverse-bias-driven dichromatic electroluminescence of n-ZnO wire arrays/p-GaN film heterojunction light-emitting diodes

Journal Article · Mon Sep 05 04:00:00 EDT 2016 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.4960586· OSTI ID:22594286

Jeong, Junseok; Choi, Ji Eun; Kim, Yong-Jin ^[1]; Hwang, Sunyong; Kim, Jong Kyu ^[2]; Kim, Sung Kyu ^[3]; Jeong, Hu Young ^[4]

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1. School of Physics and Astronomy, University of Manchester, Manchester M13 9PL (United Kingdom)
2. Department of Materials Science and Engineering, Pohang University of Science and Technology (POSTECH), Pohang 790-784 (Korea, Republic of)
3. Department of Materials Science and Engineering, KAIST, Daejeon 34141 (Korea, Republic of)
4. UNIST Central Research Facilities (UCRF), UNIST, Ulsan 44919 (Korea, Republic of)

Position-controlled n-ZnO microwire (MW) and nanowire-bundle (NW-B) arrays were fabricated using hydrothermal growth of ZnO on a patterned p-GaN film. Both the wire/film p–n heterojunctions showed electrical rectification features at reverse-bias (rb) voltages, analogous to backward diodes. Dichromatic electroluminescence (EL) emissions with 445- and 560-nm-wavelength peaks displayed whitish-blue and greenish-yellow light from MW- and NW-B-based heterojunctions at rb voltages, respectively. The different dichromatic EL emission colors were studied based on photoluminescence spectra and the dichromatic EL peak intensity ratios as a function of the rb voltage. The different EL colors are discussed with respect to depletion thickness and electron tunneling probability determined by wire/film junction geometry and size.

• OSTI ID: 22594286
• Journal Information: Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 10 Vol. 109; ISSN APPLAB; ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

71 CLASSICAL AND QUANTUM MECHANICS
GENERAL PHYSICS
75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
ELECTROLUMINESCENCE
FILMS
GALLIUM NITRIDES
GEOMETRY
HETEROJUNCTIONS
LIGHT EMITTING DIODES
NANOWIRES
P-N JUNCTIONS
PHOTOLUMINESCENCE
THICKNESS
TUNNEL EFFECT
WAVELENGTHS
WIRES
ZINC OXIDES