Reverse-bias-driven dichromatic electroluminescence of n-ZnO wire arrays/p-GaN film heterojunction light-emitting diodes
- School of Physics and Astronomy, University of Manchester, Manchester M13 9PL (United Kingdom)
- Department of Materials Science and Engineering, Pohang University of Science and Technology (POSTECH), Pohang 790-784 (Korea, Republic of)
- Department of Materials Science and Engineering, KAIST, Daejeon 34141 (Korea, Republic of)
- UNIST Central Research Facilities (UCRF), UNIST, Ulsan 44919 (Korea, Republic of)
Position-controlled n-ZnO microwire (MW) and nanowire-bundle (NW-B) arrays were fabricated using hydrothermal growth of ZnO on a patterned p-GaN film. Both the wire/film p–n heterojunctions showed electrical rectification features at reverse-bias (rb) voltages, analogous to backward diodes. Dichromatic electroluminescence (EL) emissions with 445- and 560-nm-wavelength peaks displayed whitish-blue and greenish-yellow light from MW- and NW-B-based heterojunctions at rb voltages, respectively. The different dichromatic EL emission colors were studied based on photoluminescence spectra and the dichromatic EL peak intensity ratios as a function of the rb voltage. The different EL colors are discussed with respect to depletion thickness and electron tunneling probability determined by wire/film junction geometry and size.
- OSTI ID:
- 22594286
- Journal Information:
- Applied Physics Letters, Vol. 109, Issue 10; Other Information: (c) 2016 Author(s); Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
GENERAL PHYSICS
75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
ELECTROLUMINESCENCE
FILMS
GALLIUM NITRIDES
GEOMETRY
HETEROJUNCTIONS
LIGHT EMITTING DIODES
NANOWIRES
PHOTOLUMINESCENCE
P-N JUNCTIONS
THICKNESS
TUNNEL EFFECT
WAVELENGTHS
WIRES
ZINC OXIDES