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Title: Predictive process simulation of cryogenic implants for leading edge transistor design

Abstract

Two cryogenic implant TCAD-modules have been developed: (i) A continuum-based compact model targeted towards a TCAD production environment calibrated against an extensive data-set for all common dopants. Ion-specific calibration parameters related to damage generation and dynamic annealing were used and resulted in excellent fits to the calibration data-set. (ii) A Kinetic Monte Carlo (kMC) model including the full time dependence of ion-exposure that a particular spot on the wafer experiences, as well as the resulting temperature vs. time profile of this spot. It was calibrated by adjusting damage generation and dynamic annealing parameters. The kMC simulations clearly demonstrate the importance of the time-structure of the beam for the amorphization process: Assuming an average dose-rate does not capture all of the physics and may lead to incorrect conclusions. The model enables optimization of the amorphization process through tool parameters such as scan speed or beam height.

Authors:
; ; ; ; ; ; ; ;  [1];  [2];  [3];  [3];  [2];  [3]
  1. Applied Materials, Inc., Varian Semiconductor Equipment Business Unit, 35 Dory Road, Gloucester, MA 01930 (United States)
  2. (Switzerland)
  3. (United States)
Publication Date:
OSTI Identifier:
22075704
Resource Type:
Journal Article
Journal Name:
AIP Conference Proceedings
Additional Journal Information:
Journal Volume: 1496; Journal Issue: 1; Conference: 19. international conference on ion implantation technology, Valladolid (Spain), 25-29 Jun 2012; Other Information: (c) 2012 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 0094-243X
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; 46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY; AMORPHOUS STATE; ANNEALING; CALIBRATION; COMPUTERIZED SIMULATION; DOPED MATERIALS; DOSE RATES; IMPLANTS; ION IMPLANTATION; MONTE CARLO METHOD; OPTIMIZATION; PHASE TRANSFORMATIONS; PHYSICAL RADIATION EFFECTS; TIME DEPENDENCE; TRANSISTORS; VELOCITY

Citation Formats

Gossmann, Hans-Joachim, Zographos, Nikolas, Park, Hugh, Colombeau, Benjamin, Parrill, Thomas, Khasgiwale, Niranjan, Borges, Ricardo, Gull, Ronald, Erokhin, Yuri, Synopsys Switzerland LLC, Thurgauerstrasse 40, 8050 Zuerich, Applied Materials, Inc., Varian Semiconductor Equipment Business Unit, 35 Dory Road, Gloucester, MA 01930, Synopsys Inc., 1101 Slater Road, Durham, NC 27703, Synopsys Switzerland LLC, Thurgauerstrasse 40, 8050 Zuerich, and Applied Materials, Inc., Varian Semiconductor Equipment Business Unit, 35 Dory Road, Gloucester, MA 01930. Predictive process simulation of cryogenic implants for leading edge transistor design. United States: N. p., 2012. Web. doi:10.1063/1.4766529.
Gossmann, Hans-Joachim, Zographos, Nikolas, Park, Hugh, Colombeau, Benjamin, Parrill, Thomas, Khasgiwale, Niranjan, Borges, Ricardo, Gull, Ronald, Erokhin, Yuri, Synopsys Switzerland LLC, Thurgauerstrasse 40, 8050 Zuerich, Applied Materials, Inc., Varian Semiconductor Equipment Business Unit, 35 Dory Road, Gloucester, MA 01930, Synopsys Inc., 1101 Slater Road, Durham, NC 27703, Synopsys Switzerland LLC, Thurgauerstrasse 40, 8050 Zuerich, & Applied Materials, Inc., Varian Semiconductor Equipment Business Unit, 35 Dory Road, Gloucester, MA 01930. Predictive process simulation of cryogenic implants for leading edge transistor design. United States. doi:10.1063/1.4766529.
Gossmann, Hans-Joachim, Zographos, Nikolas, Park, Hugh, Colombeau, Benjamin, Parrill, Thomas, Khasgiwale, Niranjan, Borges, Ricardo, Gull, Ronald, Erokhin, Yuri, Synopsys Switzerland LLC, Thurgauerstrasse 40, 8050 Zuerich, Applied Materials, Inc., Varian Semiconductor Equipment Business Unit, 35 Dory Road, Gloucester, MA 01930, Synopsys Inc., 1101 Slater Road, Durham, NC 27703, Synopsys Switzerland LLC, Thurgauerstrasse 40, 8050 Zuerich, and Applied Materials, Inc., Varian Semiconductor Equipment Business Unit, 35 Dory Road, Gloucester, MA 01930. Tue . "Predictive process simulation of cryogenic implants for leading edge transistor design". United States. doi:10.1063/1.4766529.
@article{osti_22075704,
title = {Predictive process simulation of cryogenic implants for leading edge transistor design},
author = {Gossmann, Hans-Joachim and Zographos, Nikolas and Park, Hugh and Colombeau, Benjamin and Parrill, Thomas and Khasgiwale, Niranjan and Borges, Ricardo and Gull, Ronald and Erokhin, Yuri and Synopsys Switzerland LLC, Thurgauerstrasse 40, 8050 Zuerich and Applied Materials, Inc., Varian Semiconductor Equipment Business Unit, 35 Dory Road, Gloucester, MA 01930 and Synopsys Inc., 1101 Slater Road, Durham, NC 27703 and Synopsys Switzerland LLC, Thurgauerstrasse 40, 8050 Zuerich and Applied Materials, Inc., Varian Semiconductor Equipment Business Unit, 35 Dory Road, Gloucester, MA 01930},
abstractNote = {Two cryogenic implant TCAD-modules have been developed: (i) A continuum-based compact model targeted towards a TCAD production environment calibrated against an extensive data-set for all common dopants. Ion-specific calibration parameters related to damage generation and dynamic annealing were used and resulted in excellent fits to the calibration data-set. (ii) A Kinetic Monte Carlo (kMC) model including the full time dependence of ion-exposure that a particular spot on the wafer experiences, as well as the resulting temperature vs. time profile of this spot. It was calibrated by adjusting damage generation and dynamic annealing parameters. The kMC simulations clearly demonstrate the importance of the time-structure of the beam for the amorphization process: Assuming an average dose-rate does not capture all of the physics and may lead to incorrect conclusions. The model enables optimization of the amorphization process through tool parameters such as scan speed or beam height.},
doi = {10.1063/1.4766529},
journal = {AIP Conference Proceedings},
issn = {0094-243X},
number = 1,
volume = 1496,
place = {United States},
year = {2012},
month = {11}
}