Ribbon and Spot Beam Process Performance of the Dual Mode iPulsar High Current Ion Implanter

Journal Article · Thu Jan 06 23:00:00 EST 2011 · AIP Conference Proceedings

DOI:https://doi.org/10.1063/1.3548414· OSTI ID:21510113

Kopalidis, Peter M; Zhimin, Wan; Collart, Erik ^[1]

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1. Advanced Ion Beam Technology Inc., 81 Daggett Drive, San Jose, CA 95134 (United States)

Low energy implant process data are presented from a dual mode high current ion implanter. The iPulsar is a flexible single wafer implanter capable of running both ribbon beams with one-dimensional mechanical scan of the wafer and spot beams with two-dimensional wafer scan. The main components of the implanter are described and their operation explained. Boron concentration profiles in Ge pre-amorphized substrates, measured by secondary ion mass spectroscopy (SIMS) are presented before and after anneal with drift and decelerated beams. In addition, spot and ribbon beam as-implanted phosphorus and carbon profiles are presented and the characteristics of each mode of operation are discussed.

• OSTI ID: 21510113
• Journal Information: AIP Conference Proceedings, Journal Name: AIP Conference Proceedings Journal Issue: 1 Vol. 1321; ISSN APCPCS; ISSN 0094-243X
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
ALLOYS
AMORPHOUS STATE
BEAMS
BORON ADDITIONS
BORON ALLOYS
CARBON IONS
CHARGED PARTICLES
CHEMICAL ANALYSIS
CURRENTS
DOPED MATERIALS
ELEMENTS
GERMANIUM
IMPLANTS
ION IMPLANTATION
ION MICROPROBE ANALYSIS
IONS
MASS SPECTROSCOPY
MATERIALS
METALS
MICROANALYSIS
NONDESTRUCTIVE ANALYSIS
PHOSPHORUS IONS
SEMICONDUCTOR MATERIALS
SPECTROSCOPY
SUBSTRATES