Ion implantation damage and rapid thermal processes in semiconductors
The characteristics of ion implantation damage, which influence the subsequent annealing behavior, are determined by both implantation and substrate variables. Fundamentals of ion-solid interactions and a model for damage accumulation and amorphization are presented. Ion channeling effects that change damage and dopant profiles were calculated as a function of ion implantation and substrate variables using MARLOWE, a well-known computer program. These calculations have been compared with experimental results on dopant profiles and residual damage. The crystalline to amorphous phase transition has been shown to occur at a critical damage energy of 12 eV/atom for silicon, in the absence of annealing effects. The conventional method of removing ion implanation damage involves isothermal annealing treatments in a furnace at about 1000/sup 0/ C for 30 minutes. However, as device dimensions become smaller, shallower junctions are needed that must be processed at reduced thermal budgets. Recently, more advanced methods for removing have been developed, which are based upon rapid heating or annealing at high temperatures for a short period of time. Almost a ''complete'' annealing of displacement damage is possible for shallow implants, provided that loop coalescence does not lead to formation of a crossgrid of dislocations. For deep implants, the free surface cannot provide an effective sink for removal of all the defects as in the case of shallow implants. Dopant profile broadening can be controlled by transient annealing to less than 500 A in layers having excellent electrical properties. Annealing mechanisms associated with amorphous layers involve solid-phase-epitaxial growth, whereas annealing of dislocation loops occurs by the glide and climb of dislocation loops.
- Research Organization:
- Materials Engineering Department, North Carolina State University, Raleigh, N.C. 27650
- OSTI ID:
- 5190390
- Report Number(s):
- CONF-8511138-
- Journal Information:
- AIP Conf. Proc.; (United States), Journal Name: AIP Conf. Proc.; (United States) Vol. 138:1; ISSN APCPC
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
360605* -- Materials-- Radiation Effects
ANNEALING
COMPUTER CODES
CRYSTAL DEFECTS
CRYSTAL STRUCTURE
CRYSTAL-PHASE TRANSFORMATIONS
DAMAGE
DISLOCATIONS
ELECTRICAL PROPERTIES
ELEMENTS
EPITAXY
HEAT TREATMENTS
ION IMPLANTATION
LINE DEFECTS
M CODES
PHASE TRANSFORMATIONS
PHYSICAL PROPERTIES
PHYSICAL RADIATION EFFECTS
RADIATION EFFECTS
SEMIMETALS
SILICON