Effects of the lateral ordering of self-assembled SiGe nanoislands grown on strained Si{sub 1-x}Ge{sub x} buffer layers

Journal Article · Tue May 15 04:00:00 EDT 2012 · Semiconductors

DOI:https://doi.org/10.1134/S1063782612050211· OSTI ID:22038977

Strelchuk, V V; Lytvyn, P M; Kladko, V P; Gudymenko, A I; Valakh, M Ya ^[1]; Krasilnik, Z F; Lobanov, D N; Novikov, A V ^[2]

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1. National Academy of Sciences of Ukraine, V. Lashkaryov Institute of Semiconductor Physics (Ukraine)
2. Russian Academy of Sciences, Institute for Physics of Microstructures (Russian Federation)

Atomic-force microscopy, micro-Raman spectroscopy, and high resolution X-ray diffraction are applied to study the spatial ordering in single layers of SiGe nanoislands grown on a strained Si{sub 1-x}Ge{sub x} buffer sublayer. It is shown that, apart from stimulating the spatial ordering of nanoislands, the introduction of a Si{sub 1-x}Ge{sub x} sublayer leads to an enhanced role for interdiffusion processes. An unusually high increase in the volume of nanoislands in the process of the epitaxy is related to the anomalously strong diffusion from the buffer sublayer into the islands that is induced by nonuniform fields of elastic strains. The anisotropy of the islands shape and spatial ordering is discussed in terms of the anisotropy of the diffusion processes in spatially nonuniform fields of elastic strains.

• OSTI ID: 22038977
• Journal Information: Semiconductors, Journal Name: Semiconductors Journal Issue: 5 Vol. 46; ISSN SMICES; ISSN 1063-7826
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ANISOTROPY
ATOMIC FORCE MICROSCOPY
BUFFERS
DIFFUSION
EPITAXY
GERMANIUM SILICIDES
LAYERS
RAMAN SPECTROSCOPY
SHAPE
X-RAY DIFFRACTION