The correlation between the surface-energy minima and the shape of self-induced SiGe nanoislands
- National Academy of Sciences of Ukraine, Lashkarev Institute of Semiconductor Physics (Ukraine)
The effects of the composition, size, and thermal expansion coefficient of self-induced Ge and SiGe nanoislands formed on Si on the value of the islands' total energy are examined. A correlation between the discrete minima in the surface energy of the islands and their shape is considered. The interdiffusion processes that are important at high temperatures of epitaxy are taken into account. The results of calculations are compared with experimental data obtained using atomic-force microscopy.
- OSTI ID:
- 21088571
- Journal Information:
- Semiconductors, Journal Name: Semiconductors Journal Issue: 4 Vol. 40; ISSN SMICES; ISSN 1063-7826
- Country of Publication:
- United States
- Language:
- English
Similar Records
Effects of the lateral ordering of self-assembled SiGe nanoislands grown on strained Si{sub 1-x}Ge{sub x} buffer layers
Gigantic uphill diffusion during self-assembled growth of Ge quantum dots on strained SiGe sublayers
Spatial correlation of self-assembled isotopically pure Ge/Si(001) nanoislands
Journal Article
·
Tue May 15 00:00:00 EDT 2012
· Semiconductors
·
OSTI ID:22038977
Gigantic uphill diffusion during self-assembled growth of Ge quantum dots on strained SiGe sublayers
Journal Article
·
Mon Apr 05 00:00:00 EDT 2010
· Applied Physics Letters
·
OSTI ID:21347353
Spatial correlation of self-assembled isotopically pure Ge/Si(001) nanoislands
Journal Article
·
Wed Apr 15 00:00:00 EDT 2009
· Physical Review. B, Condensed Matter and Materials Physics
·
OSTI ID:21308664