Gigantic uphill diffusion during self-assembled growth of Ge quantum dots on strained SiGe sublayers

Journal Article · Mon Apr 05 04:00:00 EDT 2010 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.3383241· OSTI ID:21347353

Valakh, M Ya; Lytvyn, P M; Nikolenko, A S; Strelchuk, V V ^[1]; Krasilnik, Z F; Lobanov, D N; Novikov, A V ^[2]

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1. V. Lashkaryov Institute of Semiconductor Physics, NAS of Ukraine, pr. Nauki 45, 03680 Kyiv (Ukraine)
2. Institute for Physics of Microstructures, RAS, GSP-105, Nizhny Novgorod 603950 (Russian Federation)

Raman spectroscopy and atomic-force microscopy were applied to study the morphology of nanoislands grown on strained Si{sub 1-x}Ge{sub x} sublayers. It was shown that the growth of nanoislands on strained Si{sub 1-x}Ge{sub x} sublayer not only induces the effect of their spatial ordering but also enhances the role of interdiffusion processes. Unusual high island volume increase during the epitaxy is explained by anomalous strong material diffusion from the sublayer into the islands, induced by nonuniform field of elastic strains.

• OSTI ID: 21347353
• Journal Information: Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 14 Vol. 96; ISSN APPLAB; ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

77 NANOSCIENCE AND NANOTECHNOLOGY
ATOMIC FORCE MICROSCOPY
CRYSTAL GROWTH
CRYSTAL GROWTH METHODS
DIFFUSION
ELASTICITY
ELEMENTS
EPITAXY
FABRICATION
GERMANIUM
GERMANIUM COMPOUNDS
GERMANIUM SILICIDES
LASER SPECTROSCOPY
LAYERS
MATERIALS
MECHANICAL PROPERTIES
METALS
MICROSCOPY
MOLECULAR STRUCTURE
MORPHOLOGY
NANOSTRUCTURES
QUANTUM DOTS
RAMAN SPECTRA
RAMAN SPECTROSCOPY
RESIDUAL STRESSES
SEMICONDUCTOR MATERIALS
SILICIDES
SILICON COMPOUNDS
SPECTRA
SPECTROSCOPY
STRESSES