High-quality strain-relaxed SiGe films grown with low temperature Si buffer

Journal Article · Fri Jun 15 04:00:00 EDT 2001 · Journal of Applied Physics

DOI:https://doi.org/10.1063/1.1375801· OSTI ID:40204259

Luo, Y H; Wan, J; Forrest, R L; Liu, J L; Goorsky, M S; Wang, K L

High-quality strain-relaxed SiGe templates with a low threading dislocation density and smooth surface are critical for device performance. In this work, SiGe films on low temperature Si buffer layers were grown by solid-source molecular beam epitaxy and characterized by atomic force microscope, double-axis x-ray diffraction, photoluminescence spectroscopy, and Raman spectroscopy. Effects of the growth temperature and the thickness of the low temperature Si buffer were studied. It was demonstrated that when using proper growth conditions for the low temperature Si buffer the Si buffer became tensily strained and gave rise to the compliant effect. The lattice mismatch between the SiGe and the Si buffer layer was reduced. A 500 nm Si{sub 0.7}Ge{sub 0.3} film with a low threading dislocation density as well as smooth surface was obtained by this method. {copyright} 2001 American Institute of Physics.

• Sponsoring Organization: (US)
• OSTI ID: 40204259
• Journal Information: Journal of Applied Physics, Journal Name: Journal of Applied Physics Journal Issue: 12 Vol. 89; ISSN 0021-8979
• Publisher: The American Physical Society
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
BUFFERS
DISLOCATIONS
MOLECULAR BEAM EPITAXY
PERFORMANCE
PHOTOLUMINESCENCE
PHYSICS
RAMAN SPECTROSCOPY
SPECTROSCOPY
THICKNESS
X-RAY DIFFRACTION