Impact of the sample thickness and {gamma}-irradiation dose on the occurrence of radiation-induced optical effects in chalcogenide vitreous semiconductors of the Ge-Sb-S system
The impact of the sample thickness and {gamma}-irradiation dose on the magnitude of total and static radiation-induced optical effects in chalcogenide vitreous semiconductors is studied using the example of Ge-Sb-S alloys of the Ge{sub 23.5}Sb{sub 11.8}S{sub 64.7} chemical composition. It is established that, at comparable ratios between the doses of {gamma}-irradiation ({Phi} = 3.0 and 7.72 MGy) and thicknesses of the samples (d = 1.0 and 1.7 mm), the dose change more essentially affects the occurrence of radiation-induced optical effects in the semiconductors examined.
- OSTI ID:
- 22004830
- Journal Information:
- Semiconductors, Journal Name: Semiconductors Journal Issue: 4 Vol. 45; ISSN SMICES; ISSN 1063-7826
- Country of Publication:
- United States
- Language:
- English
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