Behavior of the phonon replicas of the acceptor-bound exciton's recombination line in GaAs/AlGaAs quantum wells
- Russian Academy of Sciences, Ioffe Physicotechnical Institute (Russian Federation)
Phonon replicas of the photoluminescence line originating from recombination of acceptor-bound excitons in GaAs/AlGaAs quantum-well structures are studied. It is shown that recombination of an acceptor-bound exciton is accompanied by an Auger-type process where the constituent heavy hole in the remaining neutral acceptor makes a transition to an excited light-hole state. The excess angular momentum of the hole is transferred to the phonon.
- OSTI ID:
- 21562403
- Journal Information:
- Semiconductors, Journal Name: Semiconductors Journal Issue: 9 Vol. 43; ISSN SMICES; ISSN 1063-7826
- Country of Publication:
- United States
- Language:
- English
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