Electrons, phonons and their interactions in novel modulation doped GaAs/AlAs based quantum wells. Final technical report, 1 May 1995--31 January 1999
The lowest energy interband transitions in AlGaAs/AlAs quantum wells involve electrons localized in the AlAs x-valleys and holes confined in the AlGaAs layers. These transitions are indirect in both real as well as in kappa-space and are accompanied by strong replicas of the GaAs and AlAs phonons. When a magnetic field is applied perpendicular to the layers a large reduction in the recombination intensity is observed. This reduction is attributed to magnetic field induced localization of the carriers which results in a reduction of the electron-hole wavefunction overlap. The authors have also studied photoluminescence spectra from type-II, n-type, modulation doped GaAs/AlAs quantum wells due to radiative recombination of electrons localized in the AlAs x-valleys with holes confined in the GaAs layers. In the presence of a magnetic field the emission spectra exhibit features associated with transitions among the AlAs x-valley Landau levels and photo-injected holes. The slopes of these transitions yield an effective mass m* = 0.44 for the electrons.
- Research Organization:
- State Univ. of New York, Stony Brook, NY (United States)
- OSTI ID:
- 679026
- Report Number(s):
- AD-A--365314/XAB; CNN: Contract DAAH04-95-1-0195
- Country of Publication:
- United States
- Language:
- English
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