Terahertz radiation associated with the impurity electron transition in quantum wells upon optical and electrical pumping

Journal Article · Thu Jan 15 04:00:00 EST 2015 · Semiconductors

DOI:https://doi.org/10.1134/S106378261501008X· OSTI ID:22470140

Vorobjev, L. E.; Panevin, V. Yu.; Sofronov, A. N.; Balagula, R. M.; Makhov, I. S. ^[1]; Kozlov, D. V. ^[2]; Vasil’ev, A. P. ^[3]

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1. St. Petersburg State Polytechnical University (Russian Federation)
2. Russian Academy of Sciences, Institute of Physics of Microstructures (Russian Federation)
3. Russian Academy of Sciences, Ioffe Physical-Technical Institute (Russian Federation)

Radiation in the terahertz (THz) spectral range from structures with GaAs/AlGaAs doped quantum wells is investigated under conditions of the interband optical excitation of electron-hole pairs in n-type structures and impurity breakdown in a longitudinal electric field in p-type structures. The emission spectra are obtained. Emission is observed at low temperatures and shown to be determined by optical transitions between impurity states and transitions between the band and impurity states. Upon optical interband pumping, the impurity states are depopulated due to the recombination of electron-hole pairs with the involvement of impurities, while, in an electric field, the impurity states are depopulated due to impact ionization.

• OSTI ID: 22470140
• Journal Information: Semiconductors, Journal Name: Semiconductors Journal Issue: 1 Vol. 49; ISSN SMICES; ISSN 1063-7826
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
77 NANOSCIENCE AND NANOTECHNOLOGY
ALUMINIUM ARSENIDES
BREAKDOWN
DOPED MATERIALS
ELECTRIC FIELDS
ELECTRICAL PUMPING
ELECTRONS
EMISSION
EMISSION SPECTRA
EXCITATION
GALLIUM ARSENIDES
HOLES
IMPURITIES
IONIZATION
N-TYPE CONDUCTORS
OPTICAL PUMPING
QUANTUM WELLS
RECOMBINATION
TEMPERATURE RANGE 0065-0273 K
THZ RANGE