Terahertz emission and photoconductivity in n-type GaAs/AlGaAs quantum wells: the role of resonant impurity states
- St. Petersburg State Polytechnic University (Russian Federation)
- Russian Academy of Sciences, Ioffe Physical Technical Institute (Russian Federation)
- St. Petersburg Academic University, Research and Education Center for Nanotechnology, Russian Academy of Sciences (Russian Federation)
- Russian Academy of Sciences, Institute for Physics of Microstructures (Russian Federation)
Terahertz emission spectra in a longitudinal electric field and lateral photoconductivity spectra under terahertz illumination have been studied in structures with GaAs/AlGaAs quantum wells (QWs). It is shown that the spectra contain features associated with electron transitions involving resonant impurity states related to the second quantum-well subband. Calculations of the energy spectrum of impurity states and matrix elements of optical transitions made by taking into account various positions of the impurity relative to the QW center confirm the assumptions made.
- OSTI ID:
- 21562192
- Journal Information:
- Semiconductors, Vol. 44, Issue 11; Other Information: DOI: 10.1134/S1063782610110023; Copyright (c) 2010 Pleiades Publishing, Ltd.; ISSN 1063-7826
- Country of Publication:
- United States
- Language:
- English
Similar Records
Terahertz radiation associated with the impurity electron transition in quantum wells upon optical and electrical pumping
Effects of magnetic, electric, and intense laser fields on the optical properties of AlGaAs/GaAs quantum wells for terahertz photodetectors
The temporal dynamics of impurity photoconductivity in quantum wells in GaAs
Journal Article
·
Thu Jan 15 00:00:00 EST 2015
· Semiconductors
·
OSTI ID:21562192
+4 more
Effects of magnetic, electric, and intense laser fields on the optical properties of AlGaAs/GaAs quantum wells for terahertz photodetectors
Journal Article
·
Wed Jun 01 00:00:00 EDT 2022
· Physica. B, Condensed Matter
·
OSTI ID:21562192
+1 more
The temporal dynamics of impurity photoconductivity in quantum wells in GaAs
Journal Article
·
Thu Oct 15 00:00:00 EDT 2015
· Journal of Experimental and Theoretical Physics
·
OSTI ID:21562192
Related Subjects
36 MATERIALS SCIENCE
ALUMINIUM ARSENIDES
ELECTRIC FIELDS
ELECTRONS
EMISSION
EMISSION SPECTRA
ENERGY SPECTRA
GALLIUM ARSENIDES
IMPURITIES
MATRIX ELEMENTS
PHOTOCONDUCTIVITY
QUANTUM WELLS
ALUMINIUM COMPOUNDS
ARSENIC COMPOUNDS
ARSENIDES
ELECTRIC CONDUCTIVITY
ELECTRICAL PROPERTIES
ELEMENTARY PARTICLES
FERMIONS
GALLIUM COMPOUNDS
LEPTONS
NANOSTRUCTURES
PHYSICAL PROPERTIES
PNICTIDES
SPECTRA
ALUMINIUM ARSENIDES
ELECTRIC FIELDS
ELECTRONS
EMISSION
EMISSION SPECTRA
ENERGY SPECTRA
GALLIUM ARSENIDES
IMPURITIES
MATRIX ELEMENTS
PHOTOCONDUCTIVITY
QUANTUM WELLS
ALUMINIUM COMPOUNDS
ARSENIC COMPOUNDS
ARSENIDES
ELECTRIC CONDUCTIVITY
ELECTRICAL PROPERTIES
ELEMENTARY PARTICLES
FERMIONS
GALLIUM COMPOUNDS
LEPTONS
NANOSTRUCTURES
PHYSICAL PROPERTIES
PNICTIDES
SPECTRA