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Title: Terahertz emission and photoconductivity in n-type GaAs/AlGaAs quantum wells: the role of resonant impurity states

Journal Article · · Semiconductors
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  1. St. Petersburg State Polytechnic University (Russian Federation)
  2. Russian Academy of Sciences, Ioffe Physical Technical Institute (Russian Federation)
  3. St. Petersburg Academic University, Research and Education Center for Nanotechnology, Russian Academy of Sciences (Russian Federation)
  4. Russian Academy of Sciences, Institute for Physics of Microstructures (Russian Federation)

Terahertz emission spectra in a longitudinal electric field and lateral photoconductivity spectra under terahertz illumination have been studied in structures with GaAs/AlGaAs quantum wells (QWs). It is shown that the spectra contain features associated with electron transitions involving resonant impurity states related to the second quantum-well subband. Calculations of the energy spectrum of impurity states and matrix elements of optical transitions made by taking into account various positions of the impurity relative to the QW center confirm the assumptions made.

OSTI ID:
21562192
Journal Information:
Semiconductors, Vol. 44, Issue 11; Other Information: DOI: 10.1134/S1063782610110023; Copyright (c) 2010 Pleiades Publishing, Ltd.; ISSN 1063-7826
Country of Publication:
United States
Language:
English