Quasi-Fermi-levels in quantum-well photoluminescence

Journal Article · Thu Aug 15 04:00:00 EDT 1991 · Physical Review, B: Condensed Matter; (United States)

DOI:https://doi.org/10.1103/PhysRevB.44.3150· OSTI ID:5277183

Mahan, G D ^[1]; Oliveira, L E ^[2]

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1. Department of Physics and Astronomy, University of Tennessee, Knoxville, Tennessee (USA) Solid State Division, Oak Ridge National Laboratory, P.O. Box 2008, Oak Ridge, Tennessee (USA)
2. Instituto de Fisica, Universidade Estadual de Campinas, Caixa Postal 6165, 13081 Campinas, Sao Paulo (Brazil)

The nonequilibrium quasi-Fermi-levels of electrons and holes in quantum wells are calculated during photoluminescence. It is assumed the electrons and holes are created by continuous laser excitation. Various recombination processes are included: electron radiative recombination with holes bound at neutral acceptors, electron radiative recombination with free holes, hole trapping at ionized acceptors, and Auger decay. A numerical example is presented for acceptors in GaAs/Ga{sub 1{minus}{ital x}}Al{sub {ital x}}As quantum wells.

• DOE Contract Number: AC05-84OR21400
• OSTI ID: 5277183
• Journal Information: Physical Review, B: Condensed Matter; (United States), Journal Name: Physical Review, B: Condensed Matter; (United States) Vol. 44:7; ISSN PRBMD; ISSN 0163-1829
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360603* -- Materials-- Properties
ALUMINIUM ARSENIDES
ALUMINIUM COMPOUNDS
ARSENIC COMPOUNDS
ARSENIDES
AUGER EFFECT
ELECTROMAGNETIC RADIATION
ELECTRONIC STRUCTURE
ENERGY LEVELS
FERMI LEVEL
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
LASER RADIATION
LUMINESCENCE
PHOTOLUMINESCENCE
PNICTIDES
RADIATIONS
RECOMBINATION