Effect of the X point on the escape of electrons from the quantum well of a double-barrier heterostructure

Journal Article · Fri Feb 15 04:00:00 EST 1991 · Physical Review, B: Condensed Matter; (USA)

DOI:https://doi.org/10.1103/PhysRevB.43.4856· OSTI ID:5853383

Jackson, M K; Ting, D Z; Chow, D H; Collins, D A; Soederstroem, J R; McGill, T C ^[1]

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1. Thomas J. Watson, Sr., Laboratory of Applied Physics, California Institute of Technology, Pasadena, California 91125 (US)

We describe a photoluminescence study of a series of GaAs/AlAs/GaAs/AlAs/GaAs double-barrier heterostructures. We report the observation in double-barrier heterostructures of photoluminescence from the recombination of electrons at {ital X}-point levels localized in the AlAs barriers, with heavy holes localized in the GaAs quantum well. As the quantum-well width is decreased, the increasing confinement energy of the {Gamma}-point electron level in the quantum well results in increasing interaction with the {ital X}-point levels in the barriers. As the well width is decreased, the integrated {Gamma}-point photoluminescence intensity decreases, and then increases just before the {Gamma}-{ital X} crossover; further decrease in the well width results in monotonic decrease of intensity. This behavior is consistent with eight-band tight-binding calculations of the {Gamma}-point electron quasi-bound-state lifetime.

• OSTI ID: 5853383
• Journal Information: Physical Review, B: Condensed Matter; (USA), Journal Name: Physical Review, B: Condensed Matter; (USA) Vol. 43:6; ISSN PRBMD; ISSN 0163-1829
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360603* -- Materials-- Properties
ALUMINIUM ARSENIDES
ALUMINIUM COMPOUNDS
ARSENIC COMPOUNDS
ARSENIDES
CHARGE CARRIERS
ELECTRONS
ELEMENTARY PARTICLES
FERMIONS
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
HETEROJUNCTIONS
JUNCTIONS
LEPTONS
LUMINESCENCE
PHOTOLUMINESCENCE
PNICTIDES
SEMICONDUCTOR JUNCTIONS