Resonant level lifetime in GaAs-AlAs double-barrier structures including. Gamma. - X mixing

Journal Article · Sat Jun 15 04:00:00 EDT 1991 · Journal of Applied Physics; (USA)

DOI:https://doi.org/10.1063/1.348923· OSTI ID:5558201

Zheng, T F ^[1]; Cai, W; Hu, P ^[2]; Lax, M ^[3]; Shum, K; Alfano, R R ^[4]

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1. Department of Natural Science, Manatee College, Bradenton, Florida 34207 (USA)
2. Department of Physics, City College of the City University of New York, New York, New York 10031 (USA)
3. Department of Physics, City College of the City University of New York, New York, New York 10031 (USA) AT T Bell Laboratories, Murray Hill, New Jersey 07974 (USA)
4. Institute for Ultrafast Spectroscopy and Lasers, Departments of Electrical Engineering and Physics, City College of the City University of New York, New York, New York 10031 (USA)

A quantitative model for calculation of the lifetime of quasibound states, including the {Gamma}-{ital X} transfer, in a AlAs-GaAs-AlAs double-barrier structure is presented. When device is designed that a {Gamma}-like energy level approaches to an {ital X}-like energy level, anticrossing of the {Gamma}-{ital X} transition occurs and the lifetime of the state can be several orders larger than that of a pure {Gamma} system.

• OSTI ID: 5558201
• Journal Information: Journal of Applied Physics; (USA), Journal Name: Journal of Applied Physics; (USA) Vol. 69:12; ISSN 0021-8979; ISSN JAPIA
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360603* -- Materials-- Properties
ALUMINIUM ARSENIDES
ALUMINIUM COMPOUNDS
ARSENIC COMPOUNDS
ARSENIDES
BOUND STATE
DIFFERENTIAL EQUATIONS
ELEMENTS
EQUATIONS
GALLIUM
HETEROJUNCTIONS
JUNCTIONS
LIFETIME
MATHEMATICAL MODELS
MECHANICS
METALS
PARTIAL DIFFERENTIAL EQUATIONS
PNICTIDES
QUANTUM MECHANICS
SCHROEDINGER EQUATION
SEMICONDUCTOR JUNCTIONS
WAVE EQUATIONS