Indirect-direct anticrossing in GaAs-AlAs superlattices induced by an electric field: Evidence of GAMMA-X mixing
Journal Article
·
· Phys. Rev. Lett.; (United States)
We demonstrate that a GaAs-AlAs superlattice can be switched from indirect to direct, in both real and reciprocal spaces, by application of a modest axial electric field. The crossover region is found to be an anticrossing, manifesting the presence of GAMMA-X mixing by a potential measured to be of the order of 1 meV. This value is corroborated by time-decay measurements performed on different superlattices.
- Research Organization:
- Bell Communications Research, Red Bank, New Jersey 07701
- OSTI ID:
- 5219612
- Journal Information:
- Phys. Rev. Lett.; (United States), Journal Name: Phys. Rev. Lett.; (United States) Vol. 60:13; ISSN PRLTA
- Country of Publication:
- United States
- Language:
- English
Similar Records
X-ray evidence for a terraced GaAs/AlAs superlattice
Growth and characterization of GaAs/AlAs superlattice alloys
Phonon Knudsen flow in GaAs/AlAs superlattices
Journal Article
·
Fri Jul 01 00:00:00 EDT 1983
· Appl. Phys. Lett.; (United States)
·
OSTI ID:5784974
Growth and characterization of GaAs/AlAs superlattice alloys
Conference
·
Wed Dec 31 23:00:00 EST 1986
·
OSTI ID:7077198
Phonon Knudsen flow in GaAs/AlAs superlattices
Conference
·
Fri Sep 01 00:00:00 EDT 1995
·
OSTI ID:195692