A monolithic white LED with an active region based on InGaN QWs separated by short-period InGaN/GaN superlattices

Journal Article · Tue Jun 15 00:00:00 EDT 2010 · Semiconductors

DOI:https://doi.org/10.1134/S1063782610060205· OSTI ID:21562272

Lundin, W V; Sakharov, A V; Zavarin, E E; Usov, S O; Nikolaev, A E ^[1]; Kryzhanovskaya, N V; Synitsin, M A ^[2]; Sizov, V S ^[1]; Zakgeim, A L; Mizerov, M N ^[2]

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1. Russian Academy of Sciences, Ioffe Physicotechnical Institute (Russian Federation)
2. Russian Academy of Sciences, Scientific-Technological Center for Microelectronics and Submicrometer Heterostructures, Ioffe Physicotechnical Institute (Russian Federation)

A new approach to development of effective monolithic white-light emitters is described based on using a short-period InGaN/GaN superlattice as a barrier layer in the active region of LED structures between InGaN quantum wells emitting in the blue and yellow-green spectral ranges. The optical properties of structures of this kind have been studied, and it is demonstrated that the use of such a superlattice makes it possible to obtain effective emission from the active region.

• OSTI ID: 21562272
• Journal Information: Semiconductors, Journal Name: Semiconductors Journal Issue: 6 Vol. 44; ISSN SMICES; ISSN 1063-7826
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
EMISSION
GALLIUM COMPOUNDS
GALLIUM NITRIDES
NANOSTRUCTURES
NITRIDES
NITROGEN COMPOUNDS
OPTICAL PROPERTIES
PHYSICAL PROPERTIES
PNICTIDES
QUANTUM WELLS
SUPERLATTICES