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Optical and structural properties of InGaN/GaN short-period superlattices for the active region of light- emitting diodes

Journal Article · · Semiconductors
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  1. Russian Academy of Sciences, Ioffe Physicotechnical Institute (Russian Federation)
  2. Russian Academy of Sciences, Submicron Heterostructures for Microelectronics Research and Engineering Center (Russian Federation)
  3. Center for Material Elaboration and Structural Studies, National Center for Scientific Research (France)
  4. Russian Academy of Sciences, St. Petersburg Physics and Technology Centre for Research and Education (Russian Federation)

The results of the study of structural and optical properties of short-period InGaN/GaN superlattices synthesized by MOCVD on sapphire substrates are presented. To form the superlattices, the method of periodic interruption of the growth of the InGaN layer with hydrogen supply into the reactor was used. It is shown that, with the use of the suggested method, an InGaN/GaN periodic structure with the developed interfaces and regions of joining the neighboring InGaN layers not correlated in a vertical direction is formed. The formation of such regions leads to a heavy dependence of the shape of the emission spectra of the super-lattices on the number of periods in the range of 400-470 nm.

OSTI ID:
21562269
Journal Information:
Semiconductors, Journal Name: Semiconductors Journal Issue: 6 Vol. 44; ISSN SMICES; ISSN 1063-7826
Country of Publication:
United States
Language:
English